 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM6N03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N03FE High Speed Switching Applications Analog Switch Applications * * * * Input impedance is high. Driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching. Housed in a ultra-small package which is suitable for high density mounting. Unit: mm Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 -55~150 Unit V V mA mW C C JEDEC JEITA TOSHIBA Weight: 2-2N1D g (typ.) Note 1: Total rating, mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.135 mm 6) Equivalent Circuit (top view) 6 PIN 5 PIN 4 PIN 0.45 mm 0.3 mm Marking 6 PIN 5 PIN 4 PIN DA Q1 1 PIN 2 PIN Q2 3 PIN 1 PIN 2 PIN 3 PIN 1 2001-11-14 SSM6N03FE Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton Test Condition VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0 V, f = 1 MHz VDS = 3 V, VGS = 0 V, f = 1 MHz VDS = 3 V, VGS = 0 V, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min 3/4 20 3/4 0.7 25 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 3/4 1 1.3 3/4 12 3/4 3/4 3/4 3/4 ms 3/4 Unit mA V mA V mS W pF pF pF Switching Time Test Circuit (a) Test circuit 2.5 V Input 50 9 0 10 ms VIN ID VDD = 3 V Output D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 W) RL Common Source Ta = 25C VDD 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2001-11-14 SSM6N03FE (Q1, Q2 Common) ID - VDS 100 2.5 100 2.0 Common Source Ta = 25C 80 80 1.9 60 1.8 40 4.0 2.5 2.2 2.0 ID - VDS(Low voltage region) (mA) (mA) Common Source Ta = 25C 60 1.8 40 ID Drain current 1.7 1.6 Drain current ID 1.6 20 VGS = 1.4 V 20 VGS = 1.4 V 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) IDR - VDS 100 Common Source VGS = 0 Ta = 25C 1000 Common Source VDS = 3 V 100 ID - VGS (mA) Drain reverse current IDR (mA) IDR 10 D G 1 S 0.1 ID 10 Ta = 100C 1 25C -25C 0.1 0.01 0 Drain current -0.4 -0.6 -0.8 -1.0 -1.2 -0.2 0.01 0 0.5 1 1.5 2 2.5 3 Drain-source voltage VDS (V) Gate-source voltage VGS (V) iYfsi - ID 300 Common Source VDS = 3 V Ta = 25C 100 100 Common Source 50 VGS = 0 f = 1 MHz Ta = 25C C - VDS Forward transfer admittance 1/2Yfs1/2 (mS) (pF) Capacitance C 50 30 30 10 5 3 Ciss Coss 10 Crss 1 0.1 5 1 3 5 10 30 50 100 0.3 1 3 10 30 Drain current ID (mA) Drain-source voltage VDS (V) 3 2001-11-14 SSM6N03FE (Q1, Q2 Common) RDS (ON) - ID 10 Common Source Ta = 25C 8 10000 5000 t - ID Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25C toff 1000 500 300 ton 100 50 tr tf Drain-source on resistance RDS (ON) (W) 4 2.5 2 VGS = 4 V 30 0.1 20 40 60 80 100 Switching time 6 t (ns) 3000 0 0 0.3 1 3 10 30 100 Drain current Drain current ID (mA) ID (mA) RDS (ON) - Ta 10 Common Source ID = 10 mA 250 PD* - Ta (mW) Mounted on FR4 board. 200 (25.4 mm 25.4 mm 1.6 t 2 Cu Pad: 0.135 mm 6) Drain-source on resistance RDS (ON) (W) 8 2.5 4 Drain power dissipation 6 P D* 150 100 2 VGS = 4 V 50 0 -25 0 25 50 75 100 125 150 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Ambient temperature Ta (C) *: Total rating 4 2001-11-14 SSM6N03FE RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2001-11-14 |
Price & Availability of SSM6N03FE
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |